High Current Resistance Schottky Diode For High Frequency Switch Power Supply

High Current Resistance Schottky Diode For High Frequency Switch Power Supply​

MBR20100.pdf

The internal circuit structure of a typical Schottky rectifier is based on an N-type semiconductor substrate, on which an N-epitaxial layer with arsenic as a dopant is formed. The anode uses materials such as molybdenum or aluminum to make the barrier layer. Silicon dioxide (SiO2) is used to eliminate the electric field in the edge area and improve the withstand voltage value of the tube. The N-type substrate has a very small on-state resistance, and its doping concentration is 100% higher than that of the H-layer. An N+ cathode layer is formed under the substrate to reduce the contact resistance of the cathode. By adjusting the structural parameters, a Schottky barrier is formed between the N-type substrate and the anode metal, as shown in the figure. When a forward bias is applied to both ends of the Schottky barrier (the anode metal is connected to the positive pole of the power supply, and the N-type substrate is connected to the negative pole of the power supply), the Schottky barrier layer becomes narrower and its internal resistance becomes smaller; otherwise, if When a reverse bias is applied to both ends of the Schottky barrier, the Schottky barrier layer becomes wider and its internal resistance becomes larger.

Features

1. Common cathode structure
2. Low power loss, high efficiency
3. High Operating Junction Temperature
4. Guard ring for overvoltage protection,High reliability
5. RoHS product

Applications

1. High frequency switch Power supply

2. Free wheeling diodes, Polarity protection applications

MAIN CHARACTERISTICS

IF(AV)	10(2×5)A
VF(max)	0.7V (@Tj=125°C)
Tj	175 °C
VRRM	100 V

PRODUCT MESSAGE

Model	Marking	Package
MBR10100	MBR10100	TO-220C
MBRF10100	MBRF10100	TO-220F
MBR10100S	MBR10100S	TO-263
MBR10100R	MBR10100R	TO-252
MBR10100V	MBR10100V	TO-251
MBR10100C	MBR10100C	TO-220

ABSOLUTE RATINGS (Tc=25°C)

Parameter			Symbol	Value	Unit
Repetitive peak reverse voltage			VRRM	100	V
Maximum DC blocking voltage			VDC	100	V
Average forward current	TC=150°C (TO-220/263/252 )TC=125°C(TO-220F)	per device per diode	IF(AV)	10 5	A
Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod)			IFSM	120	A
Maximum junction temperature			Tj	175	°C
Storage temperature range			TSTG	-40~+150	°C

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High Current Resistance Schottky Diode For High Frequency Switch Power Supply Images