Strong Ability To Withstand Surge Current Schottky Diodes High Switching Frequency

Strong Ability To Withstand Surge Current Schottky Diodes High Switching Frequency​

MBR20200.pdf

Schottky diode characteristics

1. High current resistance: can withstand high surge current.
2. Low reverse withstand voltage: the general Schottky tube reverse withstand voltage is generally below 200V, generally around 100V, which limits the use of
3. High temperature resistance: the highest junction temperature of common Schottky tubes on the market is 100°C, 125°C, 150%, and 175°C (the higher the junction temperature, the better the high temperature resistance of the product. That is, the temperature at which the product works The following will not cause failure).
4. Forward voltage drop: The forward voltage drop of the Schottky diode is much lower than that of the fast recovery diode, so its own power consumption is small and the efficiency is high.
5. High temperature resistance: the highest junction temperature of common Schottky tubes on the market is 100°C, 125°C, 150%, and 175°C (the higher the junction temperature, the better the high temperature resistance of the product. That is, the temperature at which the product works The following will not cause failure).

Features

1. Common cathode structure
2. Low power loss, high efficiency
3. High Operating Junction Temperature
4. Guard ring for overvoltage protection,High reliability
5. RoHS product

Applications

1. High frequency switch Power supply

2. Free wheeling diodes, Polarity protection applications

MAIN CHARACTERISTICS

IF(AV)	10(2×5)A
VF(max)	0.7V (@Tj=125°C)
Tj	175 °C
VRRM	100 V

PRODUCT MESSAGE

Model	Marking	Package
MBR10100	MBR10100	TO-220C
MBRF10100	MBRF10100	TO-220F
MBR10100S	MBR10100S	TO-263
MBR10100R	MBR10100R	TO-252
MBR10100V	MBR10100V	TO-251
MBR10100C	MBR10100C	TO-220

ABSOLUTE RATINGS (Tc=25°C)

Parameter			Symbol	Value	Unit
Repetitive peak reverse voltage			VRRM	100	V
Maximum DC blocking voltage			VDC	100	V
Average forward current	TC=150°C (TO-220/263/252 )TC=125°C(TO-220F)	per device per diode	IF(AV)	10 5	A
Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod)			IFSM	120	A
Maximum junction temperature			Tj	175	°C
Storage temperature range			TSTG	-40~+150	°C

RoHS Schottky Diodes

0.9V Schottky Diodes

Schottky Through Hole Diodes

Strong Ability To Withstand Surge Current Schottky Diodes High Switching Frequency Images